Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display

Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors

Article history: Received 26 June 2016 Accepted 7 July 2016 Available online xxxx In the thin film transistors (TFTs) device research for foldable display, the degradation effect by the mechanical stress is crucial. Here, the crack position is critical for TFT reliability. However, it is difficult to characterize the crack position due to the random generation of the crack by mechanical stress....

Effect of selectively passivated layer on foldable low temperature polycrystalline silicon thin film transistor characteristics under dynamic mechanical stress

Article history: Received 21 May 2017 Received in revised form 19 July 2017 Accepted 26 July 2017 Available online 7 August 2017 For the next generation display, foldable display is one of the attractive candidates. However, the degradation effects due to themechanical stress on the device are unavoidable. A strain due to themechanical stress generates cracks on the thin film transistors (TFTs)...

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

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Effect of direct current sputtering power on the behavior of amorphous indium-gallium- zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

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